Product Summary

The IRG4BC30UDPBF is an insulated gate bipolar transistor with ultrafast soft recovery diode.

Parametrics

IRG4BC30UDPBF absolute maximum ratings: (1)Collector-to-Emitter Voltage, VCES: 600 V; (2)Continuous Collector Current, @ TC = 25℃, IC: 23A; (3)Continuous Collector Current, @ TC = 100℃, IC: 12A; (4)Pulsed Collector Current, ICM: 92 A; (5)Clamped Inductive Load Current, ILM: 92A; (6)Gate-to-Emitter Voltage, VGE: ±20 V; (7)IFM, Diode Maximum Forward Current: 92 A; (8)Maximum Power Dissipation, @ TC = 25℃, PD: 100W; (9)Maximum Power Dissipation, @ TC = 100℃, PD: 42W; (10)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (11)Soldering Temperature, for 10 sec: 300 (0.063 in. (1.6mm) from case); (12)Mounting torque, 6-32 or M3 screw: 10lbf·in(1.1N·m).

Features

IRG4BC30UDPBF features: (1)Ultrafast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode; (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3; (3)IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (4)Industry standard TO-220AB package; (5)Lead-Free.

Diagrams

IRG4BC30UDPBF circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRG4BC30UDPBF
IRG4BC30UDPBF
International Rectifier
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Data Sheet
0-1: $2.28
1-25: $1.56
25-100: $1.16
100-250: $1.11
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(USD)		 Quantity
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0-1: $5.72
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